NCE65T360. Аналоги и основные параметры

Наименование производителя: NCE65T360

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 101 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 54 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm

Тип корпуса: TO220

Аналог (замена) для NCE65T360

- подборⓘ MOSFET транзистора по параметрам

 

NCE65T360 даташит

 ..1. Size:611K  ncepower
 nce65t360d nce65t360 nce65t360f.pdf pdf_icon

NCE65T360

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a

 ..2. Size:1699K  ncepower
 nce65t360.pdf pdf_icon

NCE65T360

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

 ..3. Size:1699K  ncepower
 nce65t360f nce65t360 nce65t360d.pdf pdf_icon

NCE65T360

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

 0.1. Size:1699K  ncepower
 nce65t360f.pdf pdf_icon

NCE65T360

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65T260D, NCE65T260, NCE65T260F, NCE65T260I, NCE65T260K, NCE65T2K4I, NCE65T2K4K, NCE65T360D, AOD4184A, NCE65T360F, NCE65T360K, NCE65T360I, NCE65T540D, NCE65T540, NCE65T540F, NCE65T540I, NCE65T540K