NCE65T360I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65T360I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 101 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 54 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de NCE65T360I MOSFET
NCE65T360I Datasheet (PDF)
nce65t360k nce65t360i.pdf

NCE65T360K,NCE65T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust
nce65t360i.pdf

NCE65T360K,NCE65T360IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 290 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow
nce65t360i nce65t360k.pdf

NCE65T360K,NCE65T360IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 290 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow
nce65t360d nce65t360 nce65t360f.pdf

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a
Otros transistores... NCE65T260I , NCE65T260K , NCE65T2K4I , NCE65T2K4K , NCE65T360D , NCE65T360 , NCE65T360F , NCE65T360K , 5N50 , NCE65T540D , NCE65T540 , NCE65T540F , NCE65T540I , NCE65T540K , NCE65T680D , NCE65T680 , NCE65T680F .
History: BSC190N15NS3G | MMIX1F360N15T2 | NCE50NF600I | BUK9Y4R4-40E | PDC3907Z | 2N6917 | 2N80G-TF3-T
History: BSC190N15NS3G | MMIX1F360N15T2 | NCE50NF600I | BUK9Y4R4-40E | PDC3907Z | 2N6917 | 2N80G-TF3-T



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