NCE65T360I - аналоги и даташиты транзистора

 

NCE65T360I - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCE65T360I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 101 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 54 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для NCE65T360I

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE65T360I Datasheet (PDF)

 ..1. Size:487K  ncepower
 nce65t360k nce65t360i.pdf pdf_icon

NCE65T360I

NCE65T360K,NCE65T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust

 ..2. Size:1420K  ncepower
 nce65t360i.pdf pdf_icon

NCE65T360I

NCE65T360K,NCE65T360IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 290 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow

 ..3. Size:1420K  ncepower
 nce65t360i nce65t360k.pdf pdf_icon

NCE65T360I

NCE65T360K,NCE65T360IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 290 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow

 5.1. Size:611K  ncepower
 nce65t360d nce65t360 nce65t360f.pdf pdf_icon

NCE65T360I

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a

ПОКАЗАТЬ ЕЩЁ

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History: NCE65T540D

 

 
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