Справочник MOSFET. NCE65T360I

 

NCE65T360I Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65T360I
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 101 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 54 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

NCE65T360I Datasheet (PDF)

 ..1. Size:487K  ncepower
 nce65t360k nce65t360i.pdf pdf_icon

NCE65T360I

NCE65T360K,NCE65T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust

 ..2. Size:1420K  ncepower
 nce65t360i.pdf pdf_icon

NCE65T360I

NCE65T360K,NCE65T360IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 290 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow

 ..3. Size:1420K  ncepower
 nce65t360i nce65t360k.pdf pdf_icon

NCE65T360I

NCE65T360K,NCE65T360IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 290 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow

 5.1. Size:611K  ncepower
 nce65t360d nce65t360 nce65t360f.pdf pdf_icon

NCE65T360I

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a

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History: IRFH8324PBF | BWS2301 | BUZ71A | 2SK2137 | STP6NK60Z | STB200N6F3 | SVF4N150PF

 

 
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