NCE65T680F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65T680F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 28 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.68 Ohm

Encapsulados: TO220F

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NCE65T680F datasheet

 ..1. Size:761K  ncepower
nce65t680f nce65t680 nce65t680d.pdf pdf_icon

NCE65T680F

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:761K  ncepower
nce65t680f.pdf pdf_icon

NCE65T680F

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:605K  ncepower
nce65t680d nce65t680 nce65t680f.pdf pdf_icon

NCE65T680F

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:491K  ncepower
nce65t680i nce65t680k.pdf pdf_icon

NCE65T680F

NCE65T680I NCE65T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

Otros transistores... NCE65T360I, NCE65T540D, NCE65T540, NCE65T540F, NCE65T540I, NCE65T540K, NCE65T680D, NCE65T680, IRF540N, NCE65T680I, NCE65T680K, NCE65T900D, NCE65T900, NCE65T900F, NCE65T900I, NCE65T900K, NCE65TF041T