NCE65T680F Specs and Replacement

Type Designator: NCE65T680F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm

Package: TO220F

NCE65T680F substitution

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NCE65T680F datasheet

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 nce65t680f nce65t680 nce65t680d.pdf pdf_icon

NCE65T680F

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 ..2. Size:761K  ncepower
 nce65t680f.pdf pdf_icon

NCE65T680F

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 ..3. Size:605K  ncepower
 nce65t680d nce65t680 nce65t680f.pdf pdf_icon

NCE65T680F

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 5.1. Size:491K  ncepower
 nce65t680i nce65t680k.pdf pdf_icon

NCE65T680F

NCE65T680I NCE65T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

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Detailed specifications: NCE65T360I, NCE65T540D, NCE65T540, NCE65T540F, NCE65T540I, NCE65T540K, NCE65T680D, NCE65T680, IRF540N, NCE65T680I, NCE65T680K, NCE65T900D, NCE65T900, NCE65T900F, NCE65T900I, NCE65T900K, NCE65TF041T

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