All MOSFET. NCE65T680F Datasheet

 

NCE65T680F Datasheet and Replacement


   Type Designator: NCE65T680F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
   Package: TO220F
 
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NCE65T680F Datasheet (PDF)

 ..1. Size:761K  ncepower
 nce65t680f nce65t680 nce65t680d.pdf pdf_icon

NCE65T680F

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:761K  ncepower
 nce65t680f.pdf pdf_icon

NCE65T680F

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:605K  ncepower
 nce65t680d nce65t680 nce65t680f.pdf pdf_icon

NCE65T680F

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:491K  ncepower
 nce65t680i nce65t680k.pdf pdf_icon

NCE65T680F

NCE65T680INCE65T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

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Datasheet: NCE65T360I , NCE65T540D , NCE65T540 , NCE65T540F , NCE65T540I , NCE65T540K , NCE65T680D , NCE65T680 , IRF540 , NCE65T680I , NCE65T680K , NCE65T900D , NCE65T900 , NCE65T900F , NCE65T900I , NCE65T900K , NCE65TF041T .

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