FDD10AN06A0 Todos los transistores

 

FDD10AN06A0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD10AN06A0

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 135 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 28 nC

Resistencia drenaje-fuente RDS(on): 0.0105 Ohm

Empaquetado / Estuche: TO252_DPAK

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FDD10AN06A0 Datasheet (PDF)

1.1. fdd10an06 f085.pdf Size:384K _fairchild_semi

FDD10AN06A0
FDD10AN06A0

Dec 2012 FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features Applications • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 28nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management • Low Qrr Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC

1.2. fdd10an06a0.pdf Size:236K _fairchild_semi

FDD10AN06A0
FDD10AN06A0

August 2002 FDD10AN06A0 N-Channel PowerTrench MOSFET 60V, 50A, 10.5m? Features Applications rDS(ON) = 9.4m? (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 28nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS

 5.1. fdd10n20lztm.pdf Size:230K _upd-mosfet

FDD10AN06A0
FDD10AN06A0

December 2010 TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description • RDS(on) = 0.30( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS • Low Gate Charge ( Typ.12nC) technology. • Low Crss ( Typ.11pF) This advance technology h

5.2. fdd107an06la0.pdf Size:222K _upd-mosfet

FDD10AN06A0
FDD10AN06A0

January 2004 FDD107AN06LA0 N-Channel PowerTrench® MOSFET 60V, 10A, 107mΩ Features Applications • rDS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A • Motor / Body Load Control • Qg(tot) = 4.2nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC c

 5.3. fdd10n20lz.pdf Size:230K _fairchild_semi

FDD10AN06A0
FDD10AN06A0

December 2010 TM UniFET FDD10N20LZ N-Channel MOSFET? 200V Logic, 7.6A, 0.36? Features Description RDS(on) = 0.30??( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS Low Gate Charge ( Typ.12nC) technology. Low Crss ( Typ.11pF) This advance technology has been especially

Otros transistores... STU12L01 , FDC8601 , STU10N25 , FDC8602 , STU10N20 , FDC86244 , FDD050N03B , STU10N10 , 2SK2996 , FDD10N20LZ , STU10L01 , FDD120AN15A0 , FDD13AN06A0 , FDD13AN06A0_F085 , FDD14AN06LA0_F085 , FDD16AN08A0 , FDD16AN08A0_F085 .

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