FDD10AN06A0
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD10AN06A0
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 135
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 28
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105
Ohm
Package:
TO252
DPAK
FDD10AN06A0
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD10AN06A0
Datasheet (PDF)
..1. Size:236K fairchild semi
fdd10an06a0.pdf 
August 2002FDD10AN06A0N-Channel PowerTrench MOSFET60V, 50A, 10.5mFeatures Applications rDS(ON) = 9.4m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 28nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c
..2. Size:500K onsemi
fdd10an06a0 f085.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
5.1. Size:384K fairchild semi
fdd10an06 f085.pdf
Dec 2012FDD10AN06A0_F085N-Channel PowerTrench MOSFET60V, 50A, 10.5mFeatures Applications rDS(ON) = 9.4m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 28nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC
9.1. Size:222K fairchild semi
fdd107an06la0.pdf
January 2004FDD107AN06LA0N-Channel PowerTrench MOSFET60V, 10A, 107mFeatures Applications rDS(ON) = 92m (Typ.), VGS = 5V, ID = 10A Motor / Body Load Control Qg(tot) = 4.2nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c
9.2. Size:230K fairchild semi
fdd10n20lz fdd10n20lztm.pdf
December 2010 TM UniFETFDD10N20LZN-Channel MOSFET200V Logic, 7.6A, 0.36Features Description RDS(on) = 0.30( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS Low Gate Charge ( Typ.12nC)technology. Low Crss ( Typ.11pF)This advance technology h
9.3. Size:716K onsemi
fdd10n20lz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.4. Size:315K inchange semiconductor
fdd107an06la0.pdf
isc N-Channel MOSFET Transistor FDD107AN06LA0FEATURESDrain Current : I =10.9A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R =91m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
9.5. Size:315K inchange semiconductor
fdd10n20lz.pdf
isc N-Channel MOSFET Transistor FDD10N20LZFEATURESDrain Current : I =7.6A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.36(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
Datasheet: STU12L01
, FDC8601
, STU10N25
, FDC8602
, STU10N20
, FDC86244
, FDD050N03B
, STU10N10
, IRF1407
, FDD10N20LZ
, STU10L01
, FDD120AN15A0
, FDD13AN06A0
, FDD13AN06A0F085
, FDD14AN06LA0F085
, FDD16AN08A0
, FDD16AN08A0F085
.
