FDD10AN06A0 Datasheet and Replacement

August 2002FDD10AN06A0N-Channel PowerTrench MOSFET60V, 50A, 10.5mFeatures Applications rDS(ON) = 9.4m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 28nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Dec 2012FDD10AN06A0_F085N-Channel PowerTrench MOSFET60V, 50A, 10.5mFeatures Applications rDS(ON) = 9.4m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 28nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC

January 2004FDD107AN06LA0N-Channel PowerTrench MOSFET60V, 10A, 107mFeatures Applications rDS(ON) = 92m (Typ.), VGS = 5V, ID = 10A Motor / Body Load Control Qg(tot) = 4.2nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c

December 2010 TM UniFETFDD10N20LZN-Channel MOSFET200V Logic, 7.6A, 0.36Features Description RDS(on) = 0.30( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS Low Gate Charge ( Typ.12nC)technology. Low Crss ( Typ.11pF)This advance technology h

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDD107AN06LA0FEATURESDrain Current : I =10.9A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R =91m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

isc N-Channel MOSFET Transistor FDD10N20LZFEATURESDrain Current : I =7.6A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.36(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen