NCE65TF180 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65TF180
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 188 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 83 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.199 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET NCE65TF180
Principales características: NCE65TF180
nce65tf180f nce65tf180 nce65tf180d.pdf
NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion,
nce65tf180d nce65tf180 nce65tf180f.pdf
NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 160 m DS(ON) typ. with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion
nce65tf180.pdf
NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) typ. with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and i
nce65tf180f.pdf
NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) typ. with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and i
Otros transistores... NCE65TF099D , NCE65TF099 , NCE65TF099F , NCE65TF099T , NCE65TF130D , NCE65TF130 , NCE65TF130F , NCE65TF180D , P55NF06 , NCE65TF180F , NCE65TF180T , NCE65TF360D , NCE65TF360 , NCE65TF360F , NCE6802 , NCE6890 , NCE6890K .
Liste
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