NCE65TF180 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65TF180
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 188 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 21 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 36 nC
Время нарастания (tr): 6 ns
Выходная емкость (Cd): 83 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.199 Ohm
Тип корпуса: TO220
Аналог (замена) для NCE65TF180
NCE65TF180 Datasheet (PDF)
..1. nce65tf180d nce65tf180 nce65tf180f.pdf 
Size:618K _ncepower
NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) typ.with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
0.1. nce65tf180t.pdf Size:417K _ncepower
NCE65TF180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl
6.1. nce65tf130d nce65tf130 nce65tf130f.pdf Size:623K _ncepower
NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion,
7.1. nce65tf068t.pdf Size:400K _ncepower
NCE65TF068T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 62 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 53 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
7.2. nce65tf099d nce65tf099 nce65tf099f.pdf Size:578K _ncepower
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a
7.3. nce65tf360d nce65tf360 nce65tf360f.pdf Size:607K _ncepower
NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
7.4. nce65tf099t.pdf Size:403K _ncepower
NCE65TF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app
7.5. nce65tf041t.pdf Size:363K _ncepower
NCE65TF041T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
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