NCE70T180D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE70T180D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 188 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 21 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 36 nC
Tiempo de subida (tr): 6.5 nS
Conductancia de drenaje-sustrato (Cd): 83 pF
Resistencia entre drenaje y fuente RDS(on): 0.18 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET NCE70T180D
NCE70T180D Datasheet (PDF)
nce70t180d nce70t180 nce70t180f.pdf
NCE70T180D,NCE70T180,NCE70T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, an
nce70t180f.pdf
NCE70T180D,NCE70T180,NCE70T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, an
nce70t1k2f.pdf
NCE70T1K2,NCE70T1K2D,NCE70T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, an
nce70t1k2i nce70t1k2k.pdf
NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce70t1k2k nce70t1k2i.pdf
NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce70t1k2r.pdf
NCE70T1K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: LSE60R280HT
