NCE70T180D Specs and Replacement

Type Designator: NCE70T180D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 83 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO263

NCE70T180D substitution

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NCE70T180D datasheet

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 nce70t180d nce70t180 nce70t180f.pdf pdf_icon

NCE70T180D

NCE70T180D,NCE70T180,NCE70T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an... See More ⇒

 5.1. Size:623K  ncepower
 nce70t180f.pdf pdf_icon

NCE70T180D

NCE70T180D,NCE70T180,NCE70T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an... See More ⇒

 7.1. Size:594K  ncepower
 nce70t1k2f.pdf pdf_icon

NCE70T180D

NCE70T1K2,NCE70T1K2D,NCE70T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an... See More ⇒

 7.2. Size:476K  ncepower
 nce70t1k2i nce70t1k2k.pdf pdf_icon

NCE70T180D

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

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Detailed specifications: NCE65TF360D, NCE65TF360, NCE65TF360F, NCE6802, NCE6890, NCE6890K, NCE6990, NCE6990D, IRF4905, NCE70T180, NCE70T180F, NCE70T1K2K, NCE70T1K2I, NCE70T1K2R, NCE70T260D, NCE70T260, NCE70T260F

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