STU10L01 Todos los transistores

Gre r r P Pr Pr Pro STU/D10L01 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 10A 100V 213 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 Extremely low gate ch

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS RDS(on) Order codes ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V

STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STU10NA50 500 V

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS RDS(on) Type ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V

STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58 - 9.4A Max220/I-Max220 Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS(on) ID STU10NC70Z 700 V

STU10NB80 N - CHANNEL 800V - 0.65 - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STU10NB80 800 V

STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, I PAK, TO-220 and IPAK packages Datasheet production data Features TAB TAB VDSS RDS(on) Order codes ID Pw @TJmax max. 3 1 3 STD10NM60N 70 W 3 2 2 1 DPAK 1 STF10NM60N 25 W I PAK TO-220FP STI10NM60N 650 V

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 3 1 2 STD10NM65N 710 V

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID 3 STD10P6F6 1 3 STF10P6F6 2 DPAK -60 V 0.16 -10 A 1 STP10P6F6 TO-220FP STU10P6F6 TAB TAB Very low on-resistance 3 Very low gate char

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 3 1 2 STD10NM65N 710 V

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel 60 V, 0.13 typ., 10 A STripFET VI DeepGATE Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDSS RDS(on) max ID 3 1 STD10P6F6 3 2 DPAK STF10P6F6 1 60 V 0.16 10 A TO-220FP STP10P6F6 TAB STU10P6F6 TAB RDS(on) * Qg industry benchmark 3 2

STU10N20 Green Product STD10N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 306 @ VGS=10V TO-252 and TO-251 Package. 200V 8A 328 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK (

STU102S Green Product STD102S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 566 @ VGS=10V TO-252 and TO-251 Package. 100V 6A 734 @ VGS=4.5V G G S S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK)

STU10N25 Green Product STD10N25 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 250V 9A 258 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK ABS

STU10N10 Green Product STD10N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 620 @ VGS=10V TO-252 and TO-251 Package. 100V 5A 721 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( )