All MOSFET. STU10L01 Datasheet

 

STU10L01 MOSFET. Datasheet pdf. Equivalent

Type Designator: STU10L01

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 10 A

Total Gate Charge (Qg): 20 nC

Drain-Source Capacitance (Cd): 35 pF

Maximum Drain-Source On-State Resistance (Rds): 0.213 Ohm

Package: TO252 DPAK

STU10L01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU10L01 Datasheet (PDF)

0.1. stu10l01 std10l01.pdf Size:108K _samhop

STU10L01
STU10L01

GrerrPPrPrProSTU/D10L01aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.10A100V 213 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAK(TA

9.1. std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf Size:901K _st

STU10L01
STU10L01

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

9.2. std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf Size:525K _st

STU10L01
STU10L01

STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V

 9.3. stu10nc70z.pdf Size:409K _st

STU10L01
STU10L01

STU10NC70ZSTU10NC70ZIN-CHANNEL 700V - 0.58 - 9.4A Max220/I-Max220Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTU10NC70Z 700 V

9.4. std10p6f6 stf10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf Size:1525K _st

STU10L01
STU10L01

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6P-channel 60 V, 0.13 typ., 10 A STripFET VI DeepGATE Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDSS RDS(on) max ID31STD10P6F632DPAKSTF10P6F6160 V 0.16 10 A TO-220FPSTP10P6F6TABSTU10P6F6TAB RDS(on) * Qg industry benchmark32

 9.5. stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf Size:1627K _st

STU10L01
STU10L01

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch

9.6. stu10nb80.pdf Size:44K _st

STU10L01
STU10L01

STU10NB80N - CHANNEL 800V - 0.65 - 10A - Max220PowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTU10NB80 800 V

9.7. std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf Size:997K _st

STU10L01
STU10L01

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

9.8. stu10nm65n.pdf Size:523K _st

STU10L01
STU10L01

STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V

9.9. stu10na50.pdf Size:73K _st

STU10L01
STU10L01

STU10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTU10NA50 500 V

9.10. stu10n20 std10n20.pdf Size:120K _samhop

STU10L01
STU10L01

STU10N20GreenProductSTD10N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.306 @ VGS=10VTO-252 and TO-251 Package.200V8A328 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (

9.11. stu10n25 std10n25.pdf Size:128K _samhop

STU10L01
STU10L01

STU10N25GreenProductSTD10N25aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.250V 9A 258 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKABS

9.12. stu102s std102s.pdf Size:120K _samhop

STU10L01
STU10L01

STU102SGreenProductSTD102SSamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.566 @ VGS=10VTO-252 and TO-251 Package.100V 6A734 @ VGS=4.5VGGSSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)

9.13. stu10n10 std10n10.pdf Size:119K _samhop

STU10L01
STU10L01

STU10N10GreenProductSTD10N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.620 @ VGS=10VTO-252 and TO-251 Package.100V 5A721 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )

Datasheet: STU10N25 , FDC8602 , STU10N20 , FDC86244 , FDD050N03B , STU10N10 , FDD10AN06A0 , FDD10N20LZ , IRFP260 , FDD120AN15A0 , FDD13AN06A0 , FDD13AN06A0_F085 , FDD14AN06LA0_F085 , FDD16AN08A0 , FDD16AN08A0_F085 , FDD18N20LZ , STU102S .

 

 
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