NCE70T360F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE70T360F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 54 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
Paquete / Cubierta: TO220F
- Selección de transistores por parámetros
NCE70T360F Datasheet (PDF)
nce70t360f.pdf

NCE70T360D,NCE70T360,NCE70T360FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
nce70t360f nce70t360 nce70t360d.pdf

NCE70T360D,NCE70T360,NCE70T360FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
nce70t360d nce70t360 nce70t360f.pdf

NCE70T360D,NCE70T360,NCE70T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a
nce70t360k nce70t360i.pdf

NCE70T360K,NCE70T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MRF5003 | IRFR120TR | RQK0608BQDQS | 4N65KG-T60-K | STP5N62K3 | AONS36316
History: MRF5003 | IRFR120TR | RQK0608BQDQS | 4N65KG-T60-K | STP5N62K3 | AONS36316



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