NCE70T360F datasheet, аналоги, основные параметры
Наименование производителя: NCE70T360F 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 32.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 54 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.39 Ohm
Тип корпуса: TO220F
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Аналог (замена) для NCE70T360F
- подборⓘ MOSFET транзистора по параметрам
NCE70T360F даташит
nce70t360f.pdf
NCE70T360D,NCE70T360,NCE70T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
nce70t360f nce70t360 nce70t360d.pdf
NCE70T360D,NCE70T360,NCE70T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
nce70t360d nce70t360 nce70t360f.pdf
NCE70T360D,NCE70T360,NCE70T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a
nce70t360k nce70t360i.pdf
NCE70T360K,NCE70T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust
Другие IGBT... NCE70T1K2K, NCE70T1K2I, NCE70T1K2R, NCE70T260D, NCE70T260, NCE70T260F, NCE70T360D, NCE70T360, 5N65, NCE70T360K, NCE70T360I, NCE70T540I, NCE70T540K, NCE70T680D, NCE70T680, NCE70T680F, NCE70T900D
Параметры MOSFET. Взаимосвязь и компромиссы
History: SST65R600S2 | NDH8504P | IRF8714PBF | IXFK48N55
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