NCE70T360I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE70T360I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 101 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 54 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de NCE70T360I MOSFET
NCE70T360I Datasheet (PDF)
nce70t360k nce70t360i.pdf

NCE70T360K,NCE70T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust
nce70t360i.pdf

NCE70T360K,NCE70T360IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow
nce70t360i nce70t360k.pdf

NCE70T360K,NCE70T360IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow
nce70t360.pdf

NCE70T360D,NCE70T360,NCE70T360FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
Otros transistores... NCE70T1K2R , NCE70T260D , NCE70T260 , NCE70T260F , NCE70T360D , NCE70T360 , NCE70T360F , NCE70T360K , IRF530 , NCE70T540I , NCE70T540K , NCE70T680D , NCE70T680 , NCE70T680F , NCE70T900D , NCE70T900 , NCE70T900F .
History: HM10P10D | LSB55R050GT | FDU6688 | UPA1950 | BSL207SP | S85N042RP
History: HM10P10D | LSB55R050GT | FDU6688 | UPA1950 | BSL207SP | S85N042RP



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