NCE70T540I Todos los transistores

 

NCE70T540I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE70T540I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 37 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO251
 

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NCE70T540I Datasheet (PDF)

 ..1. Size:1425K  ncepower
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NCE70T540I

NCE70T540INCE70T540KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 540 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial powe

 ..2. Size:490K  ncepower
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NCE70T540I

NCE70T540INCE70T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.1. Size:603K  ncepower
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NCE70T540I

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.2. Size:603K  ncepower
nce70t540f.pdf pdf_icon

NCE70T540I

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

Otros transistores... NCE70T260D , NCE70T260 , NCE70T260F , NCE70T360D , NCE70T360 , NCE70T360F , NCE70T360K , NCE70T360I , AON7506 , NCE70T540K , NCE70T680D , NCE70T680 , NCE70T680F , NCE70T900D , NCE70T900 , NCE70T900F , NCE70T900I .

History: MRF141 | CEB10N4 | ME95N03T | GM2302 | AO4800 | AON7518 | IPB77N06S2-12

 

 
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