NCE70T540I Specs and Replacement

Type Designator: NCE70T540I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO251

NCE70T540I substitution

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NCE70T540I datasheet

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NCE70T540I

NCE70T540I NCE70T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 8 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe... See More ⇒

 ..2. Size:490K  ncepower
 nce70t540i nce70t540k.pdf pdf_icon

NCE70T540I

NCE70T540I NCE70T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

 5.1. Size:603K  ncepower
 nce70t540d.pdf pdf_icon

NCE70T540I

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 5.2. Size:603K  ncepower
 nce70t540f.pdf pdf_icon

NCE70T540I

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

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Detailed specifications: NCE70T260D, NCE70T260, NCE70T260F, NCE70T360D, NCE70T360, NCE70T360F, NCE70T360K, NCE70T360I, IRFB3607, NCE70T540K, NCE70T680D, NCE70T680, NCE70T680F, NCE70T900D, NCE70T900, NCE70T900F, NCE70T900I

Keywords - NCE70T540I MOSFET specs

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