NCE70T900K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE70T900K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 46 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 10.5 nC
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 25 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET NCE70T900K
NCE70T900K Datasheet (PDF)
nce70t900i nce70t900k.pdf
NCE70T900INCE70T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce70t900k.pdf
NCE70T900INCE70T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce70t900 nce70t900f.pdf
NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 Aindustrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce70t900i.pdf
NCE70T900INCE70T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce70t900r.pdf
NCE70T900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl
nce70t900f.pdf
NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 Aindustrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce70t900d nce70t900 nce70t900f.pdf
NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) RDS(ON)TYP 820 m with low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce70t900.pdf
NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 Aindustrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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