All MOSFET. NCE70T900K Datasheet

 

NCE70T900K MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE70T900K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO252

 NCE70T900K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE70T900K Datasheet (PDF)

 ..1. Size:484K  ncepower
nce70t900i nce70t900k.pdf

NCE70T900K
NCE70T900K

NCE70T900INCE70T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.1. Size:707K  ncepower
nce70t900 nce70t900f.pdf

NCE70T900K
NCE70T900K

NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 Aindustrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.2. Size:404K  ncepower
nce70t900r.pdf

NCE70T900K
NCE70T900K

NCE70T900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

 5.3. Size:609K  ncepower
nce70t900d nce70t900 nce70t900f.pdf

NCE70T900K
NCE70T900K

NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) RDS(ON)TYP 820 m with low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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