NCE80H12D MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCE80H12D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE80H12D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 220 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO263

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NCE80H12D datasheet

..1. Size:299K ncepower
nce80h12d.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE80H12D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

6.1. Size:337K ncepower
nce80h12.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE80H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

7.1. Size:361K 1
nce80h11.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE80H11 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)

7.2. Size:413K ncepower
nce80h15.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE80H15 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)

Otros transistores... NCE70T900D, NCE70T900, NCE70T900F, NCE70T900I, NCE70T900K, NCE7190A, NCE7560K, NCE80H12, IRF1407, NCE80H15, NCE80H16, NCE80T320D, NCE80T320, NCE80T320F, NCE80T420, NCE80T420F, NCE80T560D

History: BRCS150N10SDP

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