Справочник MOSFET. NCE80H12D

 

NCE80H12D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE80H12D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 520 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для NCE80H12D

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE80H12D Datasheet (PDF)

 ..1. Size:299K  ncepower
 nce80h12d.pdf pdf_icon

NCE80H12D

Pb Free Producthttp://www.ncepower.com NCE80H12DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

 6.1. Size:337K  ncepower
 nce80h12.pdf pdf_icon

NCE80H12D

Pb Free Producthttp://www.ncepower.com NCE80H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

 7.1. Size:361K  1
 nce80h11.pdf pdf_icon

NCE80H12D

Pb Free Producthttp://www.ncepower.com NCE80H11NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)

 7.2. Size:413K  ncepower
 nce80h15.pdf pdf_icon

NCE80H12D

Pb Free Producthttp://www.ncepower.com NCE80H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE70T900D , NCE70T900 , NCE70T900F , NCE70T900I , NCE70T900K , NCE7190A , NCE7560K , NCE80H12 , P0903BDG , NCE80H15 , NCE80H16 , NCE80T320D , NCE80T320 , NCE80T320F , NCE80T420 , NCE80T420F , NCE80T560D .

History: PSMN5R0-100PS | VBE1638 | AUIRFSL8403 | HTJ600N06 | PH6325L | MMQ60R115PTH

 

 
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