NCE80H16 Todos los transistores

 

NCE80H16 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE80H16
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 285 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 160 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 810 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
   Paquete / Cubierta: TO220
 

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NCE80H16 Datasheet (PDF)

 ..1. Size:351K  ncepower
 nce80h16.pdf pdf_icon

NCE80H16

Pb Free Producthttp://www.ncepower.com NCE80H16NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =160A RDS(ON)

 7.1. Size:361K  1
 nce80h11.pdf pdf_icon

NCE80H16

Pb Free Producthttp://www.ncepower.com NCE80H11NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)

 7.2. Size:413K  ncepower
 nce80h15.pdf pdf_icon

NCE80H16

Pb Free Producthttp://www.ncepower.com NCE80H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)

 7.3. Size:337K  ncepower
 nce80h12.pdf pdf_icon

NCE80H16

Pb Free Producthttp://www.ncepower.com NCE80H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE70T900F , NCE70T900I , NCE70T900K , NCE7190A , NCE7560K , NCE80H12 , NCE80H12D , NCE80H15 , 75N75 , NCE80T320D , NCE80T320 , NCE80T320F , NCE80T420 , NCE80T420F , NCE80T560D , NCE80T560 , NCE80T560F .

History: BR6N70 | CS8N65P

 

 
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