Справочник MOSFET. NCE80H16

 

NCE80H16 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE80H16
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 285 W
   Предельно допустимое напряжение сток-исток |Uds|: 80 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 160 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 130 nC
   Время нарастания (tr): 33 ns
   Выходная емкость (Cd): 810 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0047 Ohm
   Тип корпуса: TO220

 Аналог (замена) для NCE80H16

 

 

NCE80H16 Datasheet (PDF)

 ..1. Size:351K  ncepower
nce80h16.pdf

NCE80H16 NCE80H16

Pb Free Producthttp://www.ncepower.com NCE80H16NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =160A RDS(ON)

 7.1. Size:361K  1
nce80h11.pdf

NCE80H16 NCE80H16

Pb Free Producthttp://www.ncepower.com NCE80H11NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)

 7.2. Size:413K  ncepower
nce80h15.pdf

NCE80H16 NCE80H16

Pb Free Producthttp://www.ncepower.com NCE80H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)

 7.3. Size:337K  ncepower
nce80h12.pdf

NCE80H16 NCE80H16

Pb Free Producthttp://www.ncepower.com NCE80H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

 7.4. Size:299K  ncepower
nce80h12d.pdf

NCE80H16 NCE80H16

Pb Free Producthttp://www.ncepower.com NCE80H12DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

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