NCE8205 Todos los transistores

 

NCE8205 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE8205

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: SOT23-6L

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NCE8205 datasheet

 ..1. Size:443K  ncepower
 nce8205.pdf pdf_icon

NCE8205

Pb Free Product http //www.ncepower.com NCE8205 NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE8205 uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gener

 0.1. Size:339K  ncepower
 nce8205b.pdf pdf_icon

NCE8205

Pb Free Product http //www.ncepower.com NCE8205B NCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gen

 0.2. Size:299K  ncepower
 nce8205t.pdf pdf_icon

NCE8205

Pb Free Product http //www.ncepower.com NCE8205t NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The NCE8205t uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a Schematic diagram Battery protection or in other Switching application. Gen

 0.3. Size:403K  ncepower
 nce8205a.pdf pdf_icon

NCE8205

Pb Free Product http //www.ncepower.com NCE8205A NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gener

MOSTRAR MÁS

Otros transistores... NCE80T420, NCE80T420F, NCE80T560D, NCE80T560, NCE80T560F, NCE80T900D, NCE80T900, NCE80T900F, 8N60, NCE8205A, NCE8205I, NCE8205t, NCE8290AC, NCE8295A, NCE8295AD, NCE8295AK, NCE82H110

 

 

 

 

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