All MOSFET. NCE8205 Datasheet

 

NCE8205 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE8205
   Marking Code: 8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT23-6L

 NCE8205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE8205 Datasheet (PDF)

 ..1. Size:443K  ncepower
 nce8205.pdf

NCE8205 NCE8205

Pb Free Producthttp://www.ncepower.com NCE8205NCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener

 0.1. Size:339K  ncepower
 nce8205b.pdf

NCE8205 NCE8205

Pb Free Producthttp://www.ncepower.com NCE8205BNCE N-Channel Enhancement Mode Power MOSFET Description D1D2The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gen

 0.2. Size:299K  ncepower
 nce8205t.pdf

NCE8205 NCE8205

Pb Free Producthttp://www.ncepower.com NCE8205tNCE N-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The NCE8205t uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a Schematic diagram Battery protection or in other Switching application. Gen

 0.3. Size:403K  ncepower
 nce8205a.pdf

NCE8205 NCE8205

Pb Free Producthttp://www.ncepower.com NCE8205ANCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener

 0.4. Size:316K  ncepower
 nce8205i.pdf

NCE8205 NCE8205

Pb Free Producthttp://www.ncepower.com NCE8205iNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205i uses advanced trench technology to provide D1D2excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gen

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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