NCE8290AC Todos los transistores

 

NCE8290AC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE8290AC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 82 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 219 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO220

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NCE8290AC datasheet

 ..1. Size:353K  ncepower
 nce8290ac.pdf pdf_icon

NCE8290AC

http //www.ncepower.com NCE8290AC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290AC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =90A RDS(ON)

 7.1. Size:375K  ncepower
 nce8290.pdf pdf_icon

NCE8290AC

Pb Free Product http //www.ncepower.com NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =90A RDS(ON)

 7.2. Size:352K  ncepower
 nce8290b.pdf pdf_icon

NCE8290AC

Pb Free Product http //www.ncepower.com NCE8290B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =90A Schematic diagram RDS(ON)

 8.1. Size:612K  ncepower
 nce8295ag.pdf pdf_icon

NCE8290AC

http //www.ncepower.com NCE8295AG NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE8295AG uses advanced trench technology and design V =82V,I =95A DS D to provide excellent R with low gate charge. This device is R

MOSTRAR MÁS

Otros transistores... NCE80T560F, NCE80T900D, NCE80T900, NCE80T900F, NCE8205, NCE8205A, NCE8205I, NCE8205t, IRFB31N20D, NCE8295A, NCE8295AD, NCE8295AK, NCE82H110, NCE82H110D, NCE82H140D, NCE85H21, NCE85H21C

 

 

 

 

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