All MOSFET. NCE8290AC Datasheet

 

NCE8290AC MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE8290AC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 130 W
   Maximum Drain-Source Voltage |Vds|: 82 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 90 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 81.5 nC
   Rise Time (tr): 12 nS
   Drain-Source Capacitance (Cd): 219 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
   Package: TO220

 NCE8290AC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE8290AC Datasheet (PDF)

 ..1. Size:353K  ncepower
nce8290ac.pdf

NCE8290AC NCE8290AC

http://www.ncepower.com NCE8290ACNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290AC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =90A RDS(ON)

 8.1. Size:419K  ncepower
nce8295ak.pdf

NCE8290AC NCE8290AC

Pb Free Producthttp://www.ncepower.com NCE8295AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =95A RDS(ON)

 8.2. Size:351K  ncepower
nce8295a.pdf

NCE8290AC NCE8290AC

Pb Free Producthttp://www.ncepower.com NCE8295ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)

 8.3. Size:393K  ncepower
nce8295ad.pdf

NCE8290AC NCE8290AC

Pb Free Producthttp://www.ncepower.com NCE8295ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features Schematic diagram VDS =82V,ID =95A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top