NCE82H140D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE82H140D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 220 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 82 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 140 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 445 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm

Encapsulados: TO263

  📄📄 Copiar 

 Búsqueda de reemplazo de NCE82H140D MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE82H140D datasheet

 ..1. Size:364K  ncepower
 nce82h140d.pdf pdf_icon

NCE82H140D

http //www.ncepower.com NCE82H140D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =140A RDS(ON)

 5.1. Size:627K  ncepower
 nce82h140.pdf pdf_icon

NCE82H140D

http //www.ncepower.com NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 82V,I =140A DS D R

 5.2. Size:381K  ncepower
 nce82h140ll.pdf pdf_icon

NCE82H140D

NCE82H140LL http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE82H140LL uses advanced trench technology and VDS = 82V,ID =140A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)

 7.1. Size:369K  ncepower
 nce82h110d.pdf pdf_icon

NCE82H140D

Pb Free Product http //www.ncepower.com NCE82H110D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE8205I, NCE8205t, NCE8290AC, NCE8295A, NCE8295AD, NCE8295AK, NCE82H110, NCE82H110D, FTP08N06A, NCE85H21, NCE85H21C, NCE8804, NCE9435, NCE9926, NCEP0112AS, NCEP0114AS, NCEP0116K