NCE82H140D Todos los transistores

 

NCE82H140D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE82H140D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 82 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 445 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: TO263

 Búsqueda de reemplazo de MOSFET NCE82H140D

 

Principales características: NCE82H140D

 ..1. Size:364K  ncepower
 nce82h140d.pdf pdf_icon

NCE82H140D

http //www.ncepower.com NCE82H140D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =140A RDS(ON)

 5.1. Size:627K  ncepower
 nce82h140.pdf pdf_icon

NCE82H140D

http //www.ncepower.com NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 82V,I =140A DS D R

 5.2. Size:381K  ncepower
 nce82h140ll.pdf pdf_icon

NCE82H140D

NCE82H140LL http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE82H140LL uses advanced trench technology and VDS = 82V,ID =140A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)

 7.1. Size:369K  ncepower
 nce82h110d.pdf pdf_icon

NCE82H140D

Pb Free Product http //www.ncepower.com NCE82H110D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE8205I , NCE8205t , NCE8290AC , NCE8295A , NCE8295AD , NCE8295AK , NCE82H110 , NCE82H110D , IRF830 , NCE85H21 , NCE85H21C , NCE8804 , NCE9435 , NCE9926 , NCEP0112AS , NCEP0114AS , NCEP0116K .

 

 
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