All MOSFET. NCE82H140D Datasheet

 

NCE82H140D MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE82H140D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 158 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO263

 NCE82H140D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE82H140D Datasheet (PDF)

 ..1. Size:364K  ncepower
 nce82h140d.pdf

NCE82H140D NCE82H140D

http://www.ncepower.com NCE82H140DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =140A RDS(ON)

 5.1. Size:627K  ncepower
 nce82h140.pdf

NCE82H140D NCE82H140D

http://www.ncepower.comNCE82H140NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE82H140 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 82V,I =140ADS DR

 5.2. Size:381K  ncepower
 nce82h140ll.pdf

NCE82H140D NCE82H140D

NCE82H140LLhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE82H140LL uses advanced trench technology and VDS = 82V,ID =140A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)

 7.1. Size:369K  ncepower
 nce82h110d.pdf

NCE82H140D NCE82H140D

Pb Free Producthttp://www.ncepower.com NCE82H110DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)

 7.2. Size:328K  ncepower
 nce82h110.pdf

NCE82H140D NCE82H140D

Pb Free Producthttp://www.ncepower.com NCE82H110NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)

 7.3. Size:304K  ncepower
 nce82h160d.pdf

NCE82H140D NCE82H140D

NCE82H160Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H160D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =160A RDS(ON)

 7.4. Size:318K  ncepower
 nce82h160.pdf

NCE82H140D NCE82H140D

http://www.ncepower.com NCE82H160NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =160A RDS(ON)

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