NCE85H21 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE85H21
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 310 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 210 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 190 nS
Cossⓘ - Capacitancia de salida: 914 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCE85H21 MOSFET
- Selecciónⓘ de transistores por parámetros
NCE85H21 datasheet
nce85h21.pdf
Pb Free Product http //www.ncepower.com NCE85H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Note5 Schematic diagram RDS(ON)
nce85h21c.pdf
Pb Free Product http //www.ncepower.com NCE85H21C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)
nce85h21tc.pdf
Pb Free Product http //www.ncepower.com NCE85H21TC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)
nce85h25t.pdf
http //www.ncepower.com NCE85H25T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)
Otros transistores... NCE8205t , NCE8290AC , NCE8295A , NCE8295AD , NCE8295AK , NCE82H110 , NCE82H110D , NCE82H140D , IRLB3034 , NCE85H21C , NCE8804 , NCE9435 , NCE9926 , NCEP0112AS , NCEP0114AS , NCEP0116K , NCEP0120Q .
History: AGM210MAP | SUP60N06-12P
History: AGM210MAP | SUP60N06-12P
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