NCE85H21 PDF and Equivalents Search

 

NCE85H21 Specs and Replacement

Type Designator: NCE85H21

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 210 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 914 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO220

NCE85H21 substitution

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NCE85H21 datasheet

 ..1. Size:305K  ncepower
nce85h21.pdf pdf_icon

NCE85H21

Pb Free Product http //www.ncepower.com NCE85H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Note5 Schematic diagram RDS(ON) ... See More ⇒

 0.1. Size:322K  ncepower
nce85h21c.pdf pdf_icon

NCE85H21

Pb Free Product http //www.ncepower.com NCE85H21C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON) ... See More ⇒

 0.2. Size:285K  ncepower
nce85h21tc.pdf pdf_icon

NCE85H21

Pb Free Product http //www.ncepower.com NCE85H21TC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON) ... See More ⇒

 7.1. Size:382K  ncepower
nce85h25t.pdf pdf_icon

NCE85H21

http //www.ncepower.com NCE85H25T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON) ... See More ⇒

Detailed specifications: NCE8205t, NCE8290AC, NCE8295A, NCE8295AD, NCE8295AK, NCE82H110, NCE82H110D, NCE82H140D, IRLB3034, NCE85H21C, NCE8804, NCE9435, NCE9926, NCEP0112AS, NCEP0114AS, NCEP0116K, NCEP0120Q

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