NCE85H21C Todos los transistores

 

NCE85H21C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE85H21C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 210 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 124 nS

Cossⓘ - Capacitancia de salida: 720 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00495 Ohm

Encapsulados: TO220

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NCE85H21C datasheet

 ..1. Size:322K  ncepower
 nce85h21c.pdf pdf_icon

NCE85H21C

Pb Free Product http //www.ncepower.com NCE85H21C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

 6.1. Size:305K  ncepower
 nce85h21.pdf pdf_icon

NCE85H21C

Pb Free Product http //www.ncepower.com NCE85H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Note5 Schematic diagram RDS(ON)

 6.2. Size:285K  ncepower
 nce85h21tc.pdf pdf_icon

NCE85H21C

Pb Free Product http //www.ncepower.com NCE85H21TC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

 7.1. Size:382K  ncepower
 nce85h25t.pdf pdf_icon

NCE85H21C

http //www.ncepower.com NCE85H25T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE8290AC , NCE8295A , NCE8295AD , NCE8295AK , NCE82H110 , NCE82H110D , NCE82H140D , NCE85H21 , IRF9640 , NCE8804 , NCE9435 , NCE9926 , NCEP0112AS , NCEP0114AS , NCEP0116K , NCEP0120Q , NCEP0135A .

History: NCE9926

 

 

 

 

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