Справочник MOSFET. NCE85H21C

 

NCE85H21C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE85H21C
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 300 W
   Предельно допустимое напряжение сток-исток |Uds|: 85 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 210 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 140 nC
   Время нарастания (tr): 124 ns
   Выходная емкость (Cd): 720 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.00495 Ohm
   Тип корпуса: TO220

 Аналог (замена) для NCE85H21C

 

 

NCE85H21C Datasheet (PDF)

 ..1. Size:322K  ncepower
nce85h21c.pdf

NCE85H21C NCE85H21C

Pb Free Producthttp://www.ncepower.com NCE85H21CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

 6.1. Size:305K  ncepower
nce85h21.pdf

NCE85H21C NCE85H21C

Pb Free Producthttp://www.ncepower.com NCE85H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210ANote5 Schematic diagram RDS(ON)

 6.2. Size:285K  ncepower
nce85h21tc.pdf

NCE85H21C NCE85H21C

Pb Free Producthttp://www.ncepower.com NCE85H21TCNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

 7.1. Size:382K  ncepower
nce85h25t.pdf

NCE85H21C NCE85H21C

http://www.ncepower.com NCE85H25TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

 7.2. Size:297K  ncepower
nce85h25.pdf

NCE85H21C NCE85H21C

http://www.ncepower.com NCE85H25NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

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