NCE9435 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE9435
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 390 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de NCE9435 MOSFET
- Selecciónⓘ de transistores por parámetros
NCE9435 datasheet
nce9435.pdf
Pb Free Product http //www.ncepower.com NCE9435 NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE9435 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID
nce9435a.pdf
http //www.ncepower.com NCE9435A NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE9435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -5.3A RDS(
Otros transistores... NCE8295AD , NCE8295AK , NCE82H110 , NCE82H110D , NCE82H140D , NCE85H21 , NCE85H21C , NCE8804 , AON7403 , NCE9926 , NCEP0112AS , NCEP0114AS , NCEP0116K , NCEP0120Q , NCEP0135A , NCEP0135AK , NCEP0140AG .
History: HM4963 | AGM210MAP | SUP60N06-12P
History: HM4963 | AGM210MAP | SUP60N06-12P
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