NCE9435 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 5.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 390 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOP8
NCE9435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE9435 Datasheet (PDF)
nce9435.pdf
Pb Free Producthttp://www.ncepower.com NCE9435NCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE9435 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID
nce9435a.pdf
http://www.ncepower.com NCE9435ANCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE9435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -5.3A RDS(
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