All MOSFET. NCE9435 Datasheet

 

NCE9435 Datasheet and Replacement


   Type Designator: NCE9435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOP8
 

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NCE9435 Datasheet (PDF)

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NCE9435

Pb Free Producthttp://www.ncepower.com NCE9435NCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE9435 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID

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NCE9435

http://www.ncepower.com NCE9435ANCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE9435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -5.3A RDS(

Datasheet: NCE8295AD , NCE8295AK , NCE82H110 , NCE82H110D , NCE82H140D , NCE85H21 , NCE85H21C , NCE8804 , EMB04N03H , NCE9926 , NCEP0112AS , NCEP0114AS , NCEP0116K , NCEP0120Q , NCEP0135A , NCEP0135AK , NCEP0140AG .

History: NDDP010N25AZ

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