NCEP0116K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP0116K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 55 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 53 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de NCEP0116K MOSFET
- Selecciónⓘ de transistores por parámetros
NCEP0116K datasheet
ncep0116k.pdf
http //www.ncepower.com NCEP0116K NCE N-Channel Super Trench Power MOSFET Description The NCEP0116K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep0116as.pdf
Pb Free Product http //www.ncepower.com NCEP0116AS NCE N-Channel Super Trench Power MOSFET Description The NCEP0116AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep011n25qu.pdf
http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p
ncep011nh25qu.pdf
http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p
Otros transistores... NCE82H140D , NCE85H21 , NCE85H21C , NCE8804 , NCE9435 , NCE9926 , NCEP0112AS , NCEP0114AS , MMIS60R580P , NCEP0120Q , NCEP0135A , NCEP0135AK , NCEP0140AG , NCEP0160A , NCEP0160F , NCEP0178A , NCEP0178AF .
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