Справочник MOSFET. NCEP0116K

 

NCEP0116K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP0116K
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 55 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 16 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 5.6 nC
   Время нарастания (tr): 3 ns
   Выходная емкость (Cd): 53 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.095 Ohm
   Тип корпуса: TO252

 Аналог (замена) для NCEP0116K

 

 

NCEP0116K Datasheet (PDF)

 ..1. Size:313K  ncepower
 ncep0116k.pdf

NCEP0116K NCEP0116K

http://www.ncepower.com NCEP0116KNCE N-Channel Super Trench Power MOSFET Description The NCEP0116K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 6.1. Size:412K  ncepower
 ncep0116as.pdf

NCEP0116K NCEP0116K

Pb Free Producthttp://www.ncepower.com NCEP0116ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0116AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.1. Size:431K  ncepower
 ncep0112as.pdf

NCEP0116K NCEP0116K

Pb Free Producthttp://www.ncepower.com NCEP0112ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0112AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.2. Size:671K  ncepower
 ncep011n25qu ncep011nh25qu.pdf

NCEP0116K NCEP0116K

http://www.ncepower.com NCEP011N25QUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP011NH25QU uses Super Trench II technologyV =25V,I =161ADS Dthat is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5VDS(ON) GSswitching p

 7.3. Size:440K  ncepower
 ncep0114as.pdf

NCEP0116K NCEP0116K

Pb Free Producthttp://www.ncepower.com NCEP0114ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0114AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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