NCEP0116K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP0116K
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 5.6 nC
trⓘ - Время нарастания: 3 ns
Cossⓘ - Выходная емкость: 53 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm
Тип корпуса: TO252
NCEP0116K Datasheet (PDF)
ncep0116k.pdf
http://www.ncepower.com NCEP0116KNCE N-Channel Super Trench Power MOSFET Description The NCEP0116K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep0116as.pdf
Pb Free Producthttp://www.ncepower.com NCEP0116ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0116AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep011n25qu.pdf
http://www.ncepower.com NCEP011N25QUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP011NH25QU uses Super Trench II technologyV =25V,I =161ADS Dthat is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5VDS(ON) GSswitching p
ncep011nh25qu.pdf
http://www.ncepower.com NCEP011N25QUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP011NH25QU uses Super Trench II technologyV =25V,I =161ADS Dthat is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5VDS(ON) GSswitching p
ncep0112as.pdf
Pb Free Producthttp://www.ncepower.com NCEP0112ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0112AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep011n25qu ncep011nh25qu.pdf
http://www.ncepower.com NCEP011N25QUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP011NH25QU uses Super Trench II technologyV =25V,I =161ADS Dthat is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5VDS(ON) GSswitching p
ncep0114as.pdf
Pb Free Producthttp://www.ncepower.com NCEP0114ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0114AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918