NCEP040N85D Todos los transistores

 ..1. Size:325K  ncepower
 ncep040n85 ncep040n85d.pdf

NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 ..2. Size:699K  ncepower
 ncep040n85d.pdf

NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

 4.1. Size:699K  ncepower
 ncep040n85.pdf

NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

 4.2. Size:1002K  ncepower
 ncep040n85m.pdf

Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi

 4.3. Size:1002K  ncepower
 ncep040n85md.pdf

Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi

 4.4. Size:1123K  ncepower
 ncep040n85g.pdf

http //www.ncepower.com NCEP040N85G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N85G uses Super Trench II technology that is V =85V,I =120A DS D uniquely optimized to provide the most efficient high frequency R =3.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc

 4.5. Size:683K  ncepower
 ncep040n85gu.pdf

http //www.ncepower.com NCEP040N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N85GU uses Super Trench II technology that is V =85V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses are minimized due to an extrem

 4.6. Size:1002K  ncepower
 ncep040n85m ncep040n85md.pdf

Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi