NCEP040N85D datasheet, аналоги, основные параметры

Наименование производителя: NCEP040N85D  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 200 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 140 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 11 ns

Cossⓘ - Выходная емкость: 850 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm

Тип корпуса: TO263

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Аналог (замена) для NCEP040N85D

- подборⓘ MOSFET транзистора по параметрам

 

NCEP040N85D даташит

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NCEP040N85D

NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

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NCEP040N85D

NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

 4.1. Size:699K  ncepower
ncep040n85.pdfpdf_icon

NCEP040N85D

NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

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NCEP040N85D

Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi

Другие IGBT... NCEP035N85GU, NCEP039N10, NCEP039N10D, NCEP039N10M, NCEP039N10MD, NCEP040N10, NCEP040N10D, NCEP040N85, 2SK3568, NCEP045N10, NCEP045N10D, NCEP050N85, NCEP050N85D, NCEP055N85, NCEP055N85D, NCEP058N85, NCEP058N85D