NCEP050N85D Todos los transistores

 

NCEP050N85D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP050N85D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 650 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de NCEP050N85D MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCEP050N85D Datasheet (PDF)

 ..1. Size:396K  ncepower
 ncep050n85 ncep050n85d.pdf pdf_icon

NCEP050N85D

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 ..2. Size:395K  ncepower
 ncep050n85d.pdf pdf_icon

NCEP050N85D

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.1. Size:395K  ncepower
 ncep050n85.pdf pdf_icon

NCEP050N85D

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.2. Size:396K  ncepower
 ncep050n85m.pdf pdf_icon

NCEP050N85D

NCEP050N85M, NCEP050N85MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an e

MOSTRAR MÁS

Otros transistores... NCEP039N10MD , NCEP040N10 , NCEP040N10D , NCEP040N85 , NCEP040N85D , NCEP045N10 , NCEP045N10D , NCEP050N85 , SPP20N60C3 , NCEP055N85 , NCEP055N85D , NCEP058N85 , NCEP058N85D , NCEP065N85 , NCEP068N10AG , NCEP068N10AK , NCEP068N10G .

History: TPCA8A02-H | FDS4410 | BUK75150-55A | MTE6D5N12B0E3

 

 
Back to Top

 


 
.