All MOSFET. NCEP050N85D Datasheet

 

NCEP050N85D Datasheet and Replacement


   Type Designator: NCEP050N85D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO263
 

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NCEP050N85D Datasheet (PDF)

 ..1. Size:396K  ncepower
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NCEP050N85D

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 ..2. Size:395K  ncepower
 ncep050n85d.pdf pdf_icon

NCEP050N85D

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.1. Size:395K  ncepower
 ncep050n85.pdf pdf_icon

NCEP050N85D

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.2. Size:396K  ncepower
 ncep050n85m.pdf pdf_icon

NCEP050N85D

NCEP050N85M, NCEP050N85MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an e

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Datasheet: NCEP039N10MD , NCEP040N10 , NCEP040N10D , NCEP040N85 , NCEP040N85D , NCEP045N10 , NCEP045N10D , NCEP050N85 , SPP20N60C3 , NCEP055N85 , NCEP055N85D , NCEP058N85 , NCEP058N85D , NCEP065N85 , NCEP068N10AG , NCEP068N10AK , NCEP068N10G .

History: TSF7N60M

Keywords - NCEP050N85D MOSFET datasheet

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