NCEP058N85 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP058N85
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 85 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 95 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 67 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 540 pF
Resistencia entre drenaje y fuente RDS(on): 0.0058 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET NCEP058N85
NCEP058N85 Datasheet (PDF)
ncep058n85 ncep058n85d.pdf
NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr
ncep058n85gu.pdf
NCEP058N85GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical@ VGS=10V losses are minimized due to an extremely low combinatio
ncep058n85m.pdf
NCEP058N85M, NCEP058N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =95ADS Dswitching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext
ncep055n12ag.pdf
NCEP055N12AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =110A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.4m , typical @ VGS=4.5V losses are m
ncep050n85 ncep050n85d.pdf
NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep053n85gu.pdf
NCEP053N85GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=4.3m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low
ncep055n85 ncep055n85d.pdf
NCEP055N85, NCEP055N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =100A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep055n10u.pdf
NCEP055N10UNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combin
ncep050n12gu.pdf
NCEP050N12GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio
ncep050n10m.pdf
NCEP050N10MNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =123ADS Dswitching performance. Both conduction and switching power R =4.2m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
ncep055n30gu.pdf
http://www.ncepower.com NCEP055N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.4m (typical) @
ncep055n60gu.pdf
http://www.ncepower.com NCEP055N60GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N60GU uses Super Trench II technology that is VDS =60V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m (Typ.) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) p
ncep050n85m.pdf
NCEP050N85M, NCEP050N85MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an e
ncep055n10g.pdf
http://www.ncepower.com NCEP055N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N10G uses Super Trench II technology that is VDS =100V,ID =105A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.9m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on
ncep055n10m.pdf
NCEP055N10M, NCEP055N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =110ADS Dswitching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep055n10 ncep055n10d.pdf
NCEP055N10, NCEP055N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
ncep050n12 ncep050n12d.pdf
Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
ncep050n85g.pdf
NCEP050N85GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =100A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combina
ncep050n10mg.pdf
NCEP050N10MGNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combina
ncep055n12 ncep055n12d.pdf
NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263
ncep055n12g.pdf
NCEP055N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combination
ncep050n10md.pdf
NCEP050N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =123ADS Dswitching performance. Both conduction and switching power R =4.0m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep050n12agu.pdf
NCEP050N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.0m , typical @ VGS=4.5V losses are
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