NCEP058N85 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP058N85
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 95 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 540 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0058 Ohm
Тип корпуса: TO220
Аналог (замена) для NCEP058N85
NCEP058N85 Datasheet (PDF)
ncep058n85.pdf

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr
ncep058n85 ncep058n85d.pdf

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr
ncep058n85gu.pdf

NCEP058N85GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical@ VGS=10V losses are minimized due to an extremely low combinatio
ncep058n85d.pdf

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr
Другие MOSFET... NCEP040N85 , NCEP040N85D , NCEP045N10 , NCEP045N10D , NCEP050N85 , NCEP050N85D , NCEP055N85 , NCEP055N85D , RFP50N06 , NCEP058N85D , NCEP065N85 , NCEP068N10AG , NCEP068N10AK , NCEP068N10G , NCEP072N10 , NCEP12T12 , NCEP12T12D .
History: KMA5D8DP20Q | HCA60R040 | IPL65R420E6 | IXTP52P10P | MTB06N03E3 | NCE2301C
History: KMA5D8DP20Q | HCA60R040 | IPL65R420E6 | IXTP52P10P | MTB06N03E3 | NCE2301C



Список транзисторов
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