NCEP065N85 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP065N85
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 120 W
Voltaje máximo drenador - fuente |Vds|: 85 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 90 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 51 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 483 pF
Resistencia entre drenaje y fuente RDS(on): 0.0065 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET NCEP065N85
NCEP065N85 Datasheet (PDF)
ncep065n85 ncep065n85d.pdf
NCEP065N85,NCEP065N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.9m , typical (TO-220)@ VGS=10V losses are minimized due to an extre
ncep065n85.pdf
NCEP065N85NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.7m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low com
ncep065n12agu.pdf
NCEP065N12AGUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =100ADS Duniquely optimized to provide the most efficient high frequencyR =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =6.9m , typical @ V =4.5VDS(ON) GSlosses ar
ncep065n10gu.pdf
http://www.ncepower.com NCEP065N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP065N10GU uses Super Trench II technology that is V =100V,I =90ADS Duniquely optimized to provide the most efficient high frequencyR =5.9m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R prod
ncep065n10.pdf
NCEP065N10NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =93A switching performance. Both conduction and switching power RDS(ON)=6.0m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co
ncep065n10ak.pdf
NCEP065N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.7m , typical @ VGS=4.5V losses are m
ncep065n10agu.pdf
http://www.ncepower.com NCEP065N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10AGU uses Super Trench II technology that VDS =100V,ID =90A is uniquely optimized to provide the most efficient high RDS(ON)=5.3m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=6.5m (typical) @ VGS=4.5V switching power
ncep065n10ag.pdf
NCEP065N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.0m , typical @ VGS=4.5V losses are m
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