NCEP065N85 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP065N85
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 483 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
Тип корпуса: TO220
Аналог (замена) для NCEP065N85
NCEP065N85 Datasheet (PDF)
ncep065n85 ncep065n85d.pdf

NCEP065N85,NCEP065N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.9m , typical (TO-220)@ VGS=10V losses are minimized due to an extre
ncep065n85.pdf

NCEP065N85NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.7m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low com
ncep065n85d.pdf

NCEP065N85,NCEP065N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.9m , typical (TO-220)@ VGS=10V losses are minimized due to an extre
ncep065n12agu.pdf

NCEP065N12AGUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =100ADS Duniquely optimized to provide the most efficient high frequencyR =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =6.9m , typical @ V =4.5VDS(ON) GSlosses ar
Другие MOSFET... NCEP045N10 , NCEP045N10D , NCEP050N85 , NCEP050N85D , NCEP055N85 , NCEP055N85D , NCEP058N85 , NCEP058N85D , 4435 , NCEP068N10AG , NCEP068N10AK , NCEP068N10G , NCEP072N10 , NCEP12T12 , NCEP12T12D , NCEP1520 , NCEP1545G .
History: DAMI220N150 | TPC6009-H | IRFBC20PBF | IRFR220
History: DAMI220N150 | TPC6009-H | IRFBC20PBF | IRFR220



Список транзисторов
Обновления
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
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