NCEP068N10AG Todos los transistores

 

NCEP068N10AG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP068N10AG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 105 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 316 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm

Encapsulados: DFN5X6-8L

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NCEP068N10AG datasheet

 ..1. Size:333K  ncepower
 ncep068n10ag.pdf pdf_icon

NCEP068N10AG

http //www.ncepower.com NCEP068N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AG uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.3m (typical) @ VGS=4.5V lo

 3.1. Size:366K  ncepower
 ncep068n10ak.pdf pdf_icon

NCEP068N10AG

http //www.ncepower.com NCEP068N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AK uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.5m (typical) @ VGS=4.5V lo

 4.1. Size:308K  ncepower
 ncep068n10k.pdf pdf_icon

NCEP068N10AG

http //www.ncepower.com NCEP068N10K NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10K uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

 4.2. Size:329K  ncepower
 ncep068n10g.pdf pdf_icon

NCEP068N10AG

http //www.ncepower.com NCEP068N10G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10G uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

MOSTRAR MÁS

Otros transistores... NCEP045N10D , NCEP050N85 , NCEP050N85D , NCEP055N85 , NCEP055N85D , NCEP058N85 , NCEP058N85D , NCEP065N85 , IRF1010E , NCEP068N10AK , NCEP068N10G , NCEP072N10 , NCEP12T12 , NCEP12T12D , NCEP1520 , NCEP1545G , NCEP1545K .

 

 

 

 

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