NCEP068N10AG Datasheet and Replacement. Cross Reference Search

NCEP068N10AG Datasheet (PDF)

..1. Size:333K ncepower
ncep068n10ag.pdf pdf_icon

http://www.ncepower.com NCEP068N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AG uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.3m (typical) @ VGS=4.5V lo

3.1. Size:366K ncepower
ncep068n10ak.pdf pdf_icon

http://www.ncepower.com NCEP068N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AK uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.5m (typical) @ VGS=4.5V lo

4.1. Size:308K ncepower
ncep068n10k.pdf pdf_icon

http://www.ncepower.com NCEP068N10KNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10K uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

4.2. Size:329K ncepower
ncep068n10g.pdf pdf_icon

http://www.ncepower.com NCEP068N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10G uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

Datasheet: NCEP045N10D , NCEP050N85 , NCEP050N85D , NCEP055N85 , NCEP055N85D , NCEP058N85 , NCEP058N85D , NCEP065N85 , TK10A60D , NCEP068N10AK , NCEP068N10G , NCEP072N10 , NCEP12T12 , NCEP12T12D , NCEP1520 , NCEP1545G , NCEP1545K .