NCEP068N10AG PDF and Equivalents Search

 

NCEP068N10AG Specs and Replacement

Type Designator: NCEP068N10AG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 316 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: DFN5X6-8L

NCEP068N10AG substitution

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NCEP068N10AG datasheet

 ..1. Size:333K  ncepower
 ncep068n10ag.pdf pdf_icon

NCEP068N10AG

http //www.ncepower.com NCEP068N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AG uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.3m (typical) @ VGS=4.5V lo... See More ⇒

 3.1. Size:366K  ncepower
 ncep068n10ak.pdf pdf_icon

NCEP068N10AG

http //www.ncepower.com NCEP068N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AK uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.5m (typical) @ VGS=4.5V lo... See More ⇒

 4.1. Size:308K  ncepower
 ncep068n10k.pdf pdf_icon

NCEP068N10AG

http //www.ncepower.com NCEP068N10K NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10K uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)... See More ⇒

 4.2. Size:329K  ncepower
 ncep068n10g.pdf pdf_icon

NCEP068N10AG

http //www.ncepower.com NCEP068N10G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10G uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)... See More ⇒

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Detailed specifications: NCEP045N10D, NCEP050N85, NCEP050N85D, NCEP055N85, NCEP055N85D, NCEP058N85, NCEP058N85D, NCEP065N85, IRF1010E, NCEP068N10AK, NCEP068N10G, NCEP072N10, NCEP12T12, NCEP12T12D, NCEP1520, NCEP1545G, NCEP1545K

Keywords - NCEP068N10AG MOSFET specs

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