NCEP068N10AG Datasheet and Replacement
Type Designator: NCEP068N10AG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 316 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: DFN5X6-8L
NCEP068N10AG substitution
NCEP068N10AG Datasheet (PDF)
ncep068n10ag.pdf

http://www.ncepower.com NCEP068N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AG uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.3m (typical) @ VGS=4.5V lo
ncep068n10ak.pdf

http://www.ncepower.com NCEP068N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AK uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.5m (typical) @ VGS=4.5V lo
ncep068n10k.pdf

http://www.ncepower.com NCEP068N10KNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10K uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)
ncep068n10g.pdf

http://www.ncepower.com NCEP068N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10G uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)
Datasheet: NCEP045N10D , NCEP050N85 , NCEP050N85D , NCEP055N85 , NCEP055N85D , NCEP058N85 , NCEP058N85D , NCEP065N85 , IRF530 , NCEP068N10AK , NCEP068N10G , NCEP072N10 , NCEP12T12 , NCEP12T12D , NCEP1520 , NCEP1545G , NCEP1545K .
History: AOB25S65L | QM10N60F | IRFB4410 | SM2A16NSF | SFP030N100C3 | IXTZ35N25MB | BSS100
Keywords - NCEP068N10AG MOSFET datasheet
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NCEP068N10AG replacement
History: AOB25S65L | QM10N60F | IRFB4410 | SM2A16NSF | SFP030N100C3 | IXTZ35N25MB | BSS100



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