NCEP40T15A Todos los transistores

 

NCEP40T15A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP40T15A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 210 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.4 V
   Qgⓘ - Carga de la puerta: 81 nC
   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 1250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00195 Ohm
   Paquete / Cubierta: TO220

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NCEP40T15A Datasheet (PDF)

 ..1. Size:326K  ncepower
ncep40t15a.pdf

NCEP40T15A
NCEP40T15A

Pb Free Producthttp://www.ncepower.com NCEP40T15ANCE N-Channel Super Trench Power MOSFET Description The NCEP40T15A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 0.1. Size:844K  ncepower
ncep40t15agu.pdf

NCEP40T15A
NCEP40T15A

http://www.ncepower.com NCEP40T15AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T15AGU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =150ADS Dswitching performance. Both conduction and switching power R =1.15m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely

 0.2. Size:755K  ncepower
ncep40t15ak.pdf

NCEP40T15A
NCEP40T15A

http://www.ncepower.com NCEP40T15AKNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40T15AK uses Super Trench technology that is V =40V,I =150ADS Duniquely optimized to provide the most efficient high frequencyR =1.9m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM)

 5.1. Size:1008K  ncepower
ncep40t15gu.pdf

NCEP40T15A
NCEP40T15A

NCEP40T15GUhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =150ADS DThe NCEP40T15GU uses Super Trench technology that is uniquelyR =1.09m , typical@ V =10VDS(ON) GSoptimized to provide the most efficient high frequency switchingR =1.5m , typical@ V =4.5VDS(ON) GSperformance. Both conduction and switching power l

 5.2. Size:381K  ncepower
ncep40t15g.pdf

NCEP40T15A
NCEP40T15A

http://www.ncepower.com NCEP40T15GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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