NCEP40T15A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP40T15A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 210 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.5 nS
Cossⓘ - Capacitancia de salida: 1250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00195 Ohm
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
NCEP40T15A Datasheet (PDF)
ncep40t15a.pdf

Pb Free Producthttp://www.ncepower.com NCEP40T15ANCE N-Channel Super Trench Power MOSFET Description The NCEP40T15A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t15agu.pdf

http://www.ncepower.com NCEP40T15AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T15AGU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =150ADS Dswitching performance. Both conduction and switching power R =1.15m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely
ncep40t15ak.pdf

http://www.ncepower.com NCEP40T15AKNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40T15AK uses Super Trench technology that is V =40V,I =150ADS Duniquely optimized to provide the most efficient high frequencyR =1.9m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM)
ncep40t15gu.pdf

NCEP40T15GUhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =150ADS DThe NCEP40T15GU uses Super Trench technology that is uniquelyR =1.09m , typical@ V =10VDS(ON) GSoptimized to provide the most efficient high frequency switchingR =1.5m , typical@ V =4.5VDS(ON) GSperformance. Both conduction and switching power l
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: G11 | CEF05N6 | AUIRF7734M2 | AM2336N-T1 | DMP1096UCB4 | SMOS44N80
History: G11 | CEF05N6 | AUIRF7734M2 | AM2336N-T1 | DMP1096UCB4 | SMOS44N80



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