NCEP40T15A MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP40T15A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 81 nC
Rise Time (tr): 6.5 nS
Drain-Source Capacitance (Cd): 1250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.00195 Ohm
Package: TO220
NCEP40T15A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP40T15A Datasheet (PDF)
ncep40t15a.pdf
Pb Free Producthttp://www.ncepower.com NCEP40T15ANCE N-Channel Super Trench Power MOSFET Description The NCEP40T15A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t15agu.pdf
http://www.ncepower.com NCEP40T15AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T15AGU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =150ADS Dswitching performance. Both conduction and switching power R =1.15m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely
ncep40t15ak.pdf
http://www.ncepower.com NCEP40T15AKNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40T15AK uses Super Trench technology that is V =40V,I =150ADS Duniquely optimized to provide the most efficient high frequencyR =1.9m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM)
ncep40t15gu.pdf
NCEP40T15GUhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =150ADS DThe NCEP40T15GU uses Super Trench technology that is uniquelyR =1.09m , typical@ V =10VDS(ON) GSoptimized to provide the most efficient high frequency switchingR =1.5m , typical@ V =4.5VDS(ON) GSperformance. Both conduction and switching power l
ncep40t15g.pdf
http://www.ncepower.com NCEP40T15GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
